logo

当前位置:首页 / Products / Test Systems

STS Series

STS Series Semiconductor Static Parameter Test System

In the field of semiconductor testing, GreenTest Technology is consistently dedicated to providing professional testing solutions for the research, development, and production of semiconductor devices. The STS Series Semiconductor Static Parameter Test System is a specialized testing platform designed specifically for characterizing semiconductor components such as MOSFETs and IGBTs, offering comprehensive testing support throughout the entire process—from parameter validation to reliability evaluation.

Core Capabilities:

The STS Series Semiconductor Static Parameter Test System can measure all relevant device parameters under a wide range of operating conditions, including breakdown voltage, on-resistance, as well as IV parameters such as three-terminal FET capacitance, gate charge, and power dissipation.

STS Series Semiconductor Static Parameter Test System

Professional Test System Empowering Semiconductor Device Innovation

ico48.png

Wide Range

ico14.png

Micro-Measurement

ico34.png

Automatic Switching

System Composition

Power Supply Module

SMU Module

Output range ±210V/±10.5A (pulse), minimum resolution 100nV/10fA. (Customizable)

Signal Generation Module

LCR Module

Frequency range 1kHz-1MHz, capacitance measurement range 100fF-1μF. (Customizable)

Power Amplifier Module

Test Fixture

Equipped with socket adapters to prevent connection errors for plug-in devices. (Customizable)

Product Illustration

STS front.webp

STS Series Semiconductor Static Parameter Measurement System Technical Specifications (Customizable)

ModelSTS6001
Collector/Drain ChannelMaximum OutputVoltageDC±210V
CurrentDC±3.03A
Pulse±10.5A

Minimum Resolution

Source100nV*1/10fA*1
Measurement100nV*1/10fA*1
Gate ChannelMaximum OutputVoltageDC±210V
CurrentDC±3.03A
Pulse±10.5A
Minimum ResolutionSource100nV*1/10fA*1
Measurement100nV*1/10fA*1
Capacitance MeasurementMaximum Bias VoltageCollector/Drain/Gate±210V
Frequency Range 1kHz-1MHz
Capacitance Range 100fF-1μF
    
Operating RangeIV FunctionCollector/Drain VoltageDC±210V
Collector/Drain CurrentDC±3.03A
Pulse±10.5A
GateDC±210V/±3.03A
Pulse±210V/±10.5A
CV Function

Collector/Drain/Gate

DC Bias Voltage

±210V
Frequency1kHz-1MHz
Capacitance100fF-100nF
Gate Charge FunctionQg, Qgd, Qd1nC-100μC
VDD210V
ID10.5A
Gate Drive±30V

*1. Requires optional SMU module.

System Features

The STS Series Semiconductor Static Parameter Test System is designed around the dual dimensions of "functional modules + testing capabilities", ensuring intuitive and efficient operation while achieving comprehensive test coverage. The system, paired with IVCVQG test fixtures and SemiWorks host computer testing software, enables multi-dimensional testing capabilities to meet the full lifecycle testing needs of semiconductor devices from R&D to mass production.

ico48.png

Wide Range

Features a wide range of voltage and current (optional, up to 3kV and 1500A).

ico14.png

Micro-Measurement

Current measurement down to below nanoampere levels.

ico34.png

Automatic Switching

The IVCVQG test fixture integrates a fully automatic test switching circuit, capable of performing high-voltage and high-current tests as well as switching between IV and CV measurements.

ico28.png

One-Stop Solution

Provides full-process testing support, from parameter verification to reliability evaluation.

Application Scenarios

car.png

New Energy Vehicles

  • Testing parameters such as breakdown voltage and conduction voltage drop of semiconductor devices to ensure the efficiency and reliability of the electric drive system.
  • Incoming material screening and failure analysis of semiconductor devices in On-Board Chargers (OBC) to ensure fast charging safety.
  • Verification of forward voltage drop and leakage current of diodes to optimize battery protection circuit performance.
Photovoltaics.png

Photovoltaics/Energy Storage

  • Testing the high-frequency characteristics (e.g., junction capacitance Ciss, Crss) of SiC/GaN devices to optimize inverter conversion efficiency.
  • Threshold voltage drift test (VGE(th)) for power modules to prevent failure risks.
  • Evaluating the long-term reliability of IGBTs in energy storage converters through static parameters.

寻找更多销售、技术和解决方案的信息?

联系我们
联系电话: 020-2204 2442
邮箱:Sales@greentest.com.cn
微信客服二维码
Baidu
map